PART |
Description |
Maker |
2N4234E3 2N4236E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
S13003AD-H |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
MJH16002A MJH16004 |
Bipolar Junction Transistor NPN SILICON POWER TRANSISTORS
|
New Jersey Semiconductors New Jersey Semi-Conductor P...
|
SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
MMBT2132 MMBT2132T1-D |
General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3)
|
ON Semiconductor
|
2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|
2DB1697 2DB1697-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
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ZXTC6717MC |
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ZXT10P20DE6TA ZXT10P20DE6TC |
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FMMTL717 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
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